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| 2SK3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3845 Switching Regulator, DC-DC Converter Applications and Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 4.7 m (typ.) High forward transfer admittance: |Yfs| = 88 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 20 70 280 125 328 70 12.5 150 -55 to150 Unit V V V A W mJ A mJ C C Pulse (Note 1) 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC JEITA TOSHIBA 2-16C1B Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 1.0 50 Unit C/W C/W 1 2 Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 25 V, Tch = 25C (initial), L = 91 H, RG = 25 , IAR = 70 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3 1 2006-11-17 2SK3845 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 48 V, VGS = 10 V, ID = 70 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Yfs Ciss Crss Coss tr ton 50 10 V VGS 0V ID = 35 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 60V, VGS = 0 V ID = 10mA, VGS = 0 V ID = 10mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 35 A VDS = 10 V, ID = 35 A Min 60 35 2.0 44 VDD30 V Typ. 4.7 88 12400 700 1100 17 44 35 200 196 148 48 Max 10 100 4.0 5.8 ns nC pF Unit A A V V m S RL = 0.86 Duty < 1%, tw = 10 s = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 70 A, VGS = 0 V IDR = 70 A, VGS = 0 V, dIDR/dt = 50 A/s Min Typ. 70 77 Max 70 280 -1.5 Unit A A V ns nC Marking TOSHIBA K3845 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-17 2SK3845 ID - VDS 100 Common source Tc = 25C Pulse test 8 60 200 10 6 5 8 160 10 6 5.2 ID - VDS Common source Tc = 25C Pulse test 5 80 (A) ID ID (A) 4.5 4.3 120 4.8 Drain current Drain current 40 VGS = 4 V 20 80 4.5 4.3 40 VGS = 4 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 160 1.0 VDS - VGS VDS (V) Common source Tc = 25C Pulse test Common source VDS = 20 V Pulse test 0.8 (A) ID 120 100 80 25 Tc = -55C Drain-source voltage 0.6 Drain current 0.4 70 40 0.2 35 0 0 2 4 6 8 0 ID = 18 A 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID (S) 1000 Common source VDS = 20 V Pulse test 100 Tc = -55C 25 100 100 Common source Tc = 25C Pulse test RDS (ON) - ID Yfs Forward transfer admittance Drain-source ON resistance RDS (ON) () 10 VGS = 10, 15 V 10 1 1 1 10 100 1000 1 10 100 1000 Drain current ID (A) Drain current ID (A) 3 2006-11-17 2SK3845 RDS (ON) - Tc 10 Common source VGS = 10 V Pulse test 1000 IDR - VDS Drain-source ON resistance RDS (ON) () 8 35 18 6 (A) ID = 70 A IDR 10 100 5 3 4 Drain reverse current 10 1 VGS = 0 V Common source Tc = 25C Pulse test 2 0 -80 1 -40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0 1.2 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 100000 5 Vth - Tc Vth (V) Common source VDS = 10 V ID = 1 mA Pulse test (pF) Ciss 10000 4 C Gate threshold voltage 3 Capacitance 1000 Common source VGS = 0 V f = 1 MHz Tc = 25C 100 0.1 1 10 Coss 2 1 Crss 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 150 50 Dynamic input/output characteristics 25 VDS 40 20 (W) Drain power dissipation Drain-source voltage 90 VDD = 12 V 24V VGS 10 48V Common source ID = 70 A Tc = 25C Pulse test 15 60 20 10 30 5 0 0 40 80 120 160 0 0 80 160 240 0 320 Case temperature Tc (C) Total gate charge Qg (nC) 4 2006-11-17 Gate-source voltage 30 VGS PD 120 VDS (V) (V) 2SK3845 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10 100 1m 10 m 100 m Single Pulse PDM t T Duty = t/T Rth (ch-c) = 1.0C/W 1 10 Pulse width tw (S) Safe operating area 1000 500 300 ID max (pulsed) * 100 s * 1 ms * 500 EAS - Tch Avalanche energy EAS (mJ) 400 100 ID max (continuous) Drain current ID (A) 300 30 200 10 5 3 DC operation Tc = 25C 100 0 25 1 0.5 *: Single nonrepetitive pulse Tc = 25C 50 75 100 125 150 Channel temperature (initial) Tch (C) 0.3 Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 100 15 V 0V BVDSS IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 VDD = 25 V, L = 91 H Wave form AS = 1 B VDSS L I2 B 2 VDSS - VDD 5 2006-11-17 2SK3845 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-17 |
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